IGNOU MPH 5 2026 - Describe the construction of Gunn diode. Explain with the help of E-k

Question

Describe the construction of Gunn diode. Explain with the help of E-k diagram the origin of negative resistance region in its I-V characteristics.

19 Jan 2026

Answer :

Word Count : 446

A Gunn diode is a transferred-electron device that operates without a p–n junction and is based on the bulk properties of certain semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP). Its construction consists of a thin slab of n-type semiconductor material with very high doping concentration, sandwiched between two metallic ohmic contacts. The device has three regions: a highly doped n⁺ layer near the cathode, a moderately doped active n-region in the middle, and another highly doped n⁺ layer near the anode. The n⁺ regions ensure low-resistance ohmic contacts, while the central n-region is responsible for microwave generation. The entire structure is usually mounted on a heat sink because the device operates at high electric fields and generates considerable heat. When a DC voltage is applied across the diode, an electric field is established in the active region. Unlike conventional diodes,

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